View cs150n04 a8 datasheet:

Silicon N-Channel Power MOSFET R CS150N04 A8 General Description VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features Fast Switching Low ON Resistance(Rdson4.5mType4m) High Power and Current Handing Capability Low Reverse transfer Capacitances(Typical:480pF) 100% Single Pulse avalanche energy Test Applications UPS,Inverter,Lighting. AbsoluteTc= 25 unless otherwise specified Parameter Symbol Rating Units VDSS Drain-to

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