View cs2300 sot-23 datasheet:

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2300 MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 20 V VGS Gate-Source voltage 10 VID Drain current 2.9 A PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNITDrain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 20 VGate-Threshold Voltage Vth(GS) VDS= VGS, ID=250 uA 0.5 0.75 1.2 V Gate-body Leakage IGSS VDS=0V, VGS=10V 100 nA Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 uAVGS=2.5V, ID=2.5A 37 59 m Drain-Source On-Res

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