View cs8n90f a9 datasheet:
Silicon N-Channel Power MOSFET R CS8N90F A9 VDSS 900 V General Description ID 8 A CS8N90F A9, the silicon N-channel Enhanced PD (TC=25) 57 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.2 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features Fast Switching Low ON Resistance(Rdson1.5) Low Gate Charge (Typical Data:49nC) Low Reverse transfer capacitances(Typical:12pF) 100% Single Pulse avalanche energy Test Applications Power switch circuit of adaptor and charger. AbsoluteTc= 25 unless otherwise specified Symbol Parameter Rating Units VDSS
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cs8n90f a9.pdf Design, MOSFET, Power
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