View fcd4n60tf fcd4n60tm datasheet:

October 2013FCD4N60N-Channel SuperFET MOSFET600 V, 3.9 A, 1.2 Features Description 650 V @TJ = 150 C SuperFET MOSFET is Fairchild Semiconductors first genera-tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 1.0 utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 12.8 nC)resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch- Low Effective Output Capacitance (Typ. Coss.eff = 32 pF)ing performance, dv/dt rate and higher avalanche energy. Con- 100% Avalanche Testedsequently, SuperFET MOSFET is very suitable for the switching RoHS Compliant power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.Applications Lighting

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 fcd4n60tf fcd4n60tm.pdf Design, MOSFET, Power

 fcd4n60tf fcd4n60tm.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fcd4n60tf fcd4n60tm.pdf Database, Innovation, IC, Electricity