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fdd107an06la0fdd107an06la0

January 2004FDD107AN06LA0N-Channel PowerTrench MOSFET60V, 10A, 107mFeatures Applications rDS(ON) = 92m (Typ.), VGS = 5V, ID = 10A Motor / Body Load Control Qg(tot) = 4.2nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC converters and Off-line UPS Qualified to AEC Q101 Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systemsFormerly developmental type 83524DRAIN (FLANGE)DGATEGSOURCETO-252AASFDD SERIESMOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter Ratings UnitsVDSS Drain to Source Voltage 60 VVGS Gate to Source Voltage 20 VDrain Current10.9 AContinuous (TC = 25oC, VGS = 10V) Continuous (TC = 25oC, VGS = 5V) 10 AI

 

Keywords - ALL TRANSISTORS DATASHEET

 fdd107an06la0.pdf Design, MOSFET, Power

 fdd107an06la0.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdd107an06la0.pdf Database, Innovation, IC, Electricity

 

 
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