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fdd10an06a0fdd10an06a0

August 2002FDD10AN06A0N-Channel PowerTrench MOSFET60V, 50A, 10.5mFeatures Applications rDS(ON) = 9.4m (Typ.), VGS = 10V, ID = 50A Motor / Body Load Control Qg(tot) = 28nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC converters and Off-line UPS Qualified to AEC Q101 Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systemsFormerly developmental type 82560DRAIN (FLANGE) DGATEGSOURCESTO-252AAFDD SERIES MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter Ratings UnitsVDSS Drain to Source Voltage 60 VVGS Gate to Source Voltage 20 VDrain Current50 AContinuous (TC

 

Keywords - ALL TRANSISTORS DATASHEET

 fdd10an06a0.pdf Design, MOSFET, Power

 fdd10an06a0.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdd10an06a0.pdf Database, Innovation, IC, Electricity

 

 
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