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December 2010 TM UniFETFDD10N20LZN-Channel MOSFET200V Logic, 7.6A, 0.36Features Description RDS(on) = 0.30( Typ.) @ VGS = 10V, ID = 3.8A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS Low Gate Charge ( Typ.12nC)technology. Low Crss ( Typ.11pF)This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and Fast Switching withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching 100% Avalanche Testedmode power supplies and active power factor correction. Improved dv/dt Capability RoHS CompliantDDDGGGSD-PAKFDD- SeriesSSMOSFET Maximum Ratings TC = 25oC unless otherwise not

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