View fdd6n20 fdu6n20 datasheet:

May 2007UniFETTMFDD6N20 / FDU6N20tmN-Channel MOSFET 200V, 4.5A, 0.8Features Description RDS(on) = 0.6 ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 4.7nC )stripe, DMOS technology. Low Crss ( Typ. 6.3pF )This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switchingperformance, and withstand high energy pulse in the avalanche 100% avalanche testedand commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor Improved dv/dt capabilitycorrection. RoHS compliantDDGGSI-PAKG SDD-PAKFDU SeriesFDD SeriesSMOSFET Maximum Ratings TC = 25oC unless other

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