View fdd6n20tm datasheet:

November 2013FDD6N20TMN-Channel UniFETTM MOSFET200 V, 4.5 A, 800 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 600 m (Typ.) @ VGS = 10 V, ID = 2.3 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 4.7 nC)This MOSFET is tailored to reduce on-state resistance, and toprovide better switching performance and higher avalanche en- Low Crss (Typ. 6.3 pF)ergy strength. This device family is suitable for switching power 100% Avalanche Testedconverter applications such as power factor correction (PFC), RoHS Compliant flat panel display (FPD) TV power, ATX and electronic lamp bal-lasts.Applications LCD/LED/PDP TV Consumer Appliances Lighting Uninterruptible Power SupplyDDGGSD-PAKSMOSFET Maximum Ratings TC = 25oC unless otherwise note

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 fdd6n20tm.pdf Design, MOSFET, Power

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