View fdd6n50 fdu6n50 datasheet:

January 2006TMUniFETFDD6N50/FDU6N50 500V N-Channel MOSFETFeatures Description 6A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 12.8 nC)stripe, DMOS technology. Low Crss ( typical 9 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the avalanche Improved dv/dt capabilityand commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.DDGD-PAK I-PAKG SFDD Series FDU SeriesG D SSAbsolute Maximum RatingsSymbol Parameter FDD6N50/FDU6N50 UnitVDSS Drain-Source Volt

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