View fdd7n20 fdu7n20 datasheet:

April 2007UniFETTMFDD7N20 / FDU7N20tmN-Channel MOSFET 200V, 5A, 0.69Features Description RDS(on) = 0.58 ( Typ. ) @ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge( Typ. 5nC )stripe, DMOS technology. Low Crss ( Typ. 5pF ) This advanced technology has been especically tailored to Fast switchingminimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalanche 100% avalanche testedand commutation mode. These devices are well suited for high Improved dv/dt capabilityefficient switched mode power supplies and active power factor RoHS compliant correction.DDGGI-PAKSFDU SeriesD-PAK G SDFDD SeriesSMOSFET Maximum Ratings TC = 25oC unless otherwise

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 fdd7n20 fdu7n20.pdf Design, MOSFET, Power

 fdd7n20 fdu7n20.pdf RoHS Compliant, Service, Triacs, Semiconductor

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