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View fdd7n20tm datasheet:

fdd7n20tmfdd7n20tm

November 2013FDD7N20TMN-Channel UniFETTM MOSFET200 V, 5 A, 690 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 580 m (Typ.) @ VGS = 10 V, ID = 2.5 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 5 nC)This MOSFET is tailored to reduce on-state resistance, and toprovide better switching performance and higher avalanche en- Low Crss (Typ. 5 pF)ergy strength. This device family is suitable for switching power 100% Avalanche Testedconverter applications such as power factor correction (PFC), RoHS Compliant flat panel display (FPD) TV power, ATX and electronic lamp bal-lasts.Applications LCD/LED/PDP TV Consumer Appliances Lighting Uninterruptible Power AC-DC Power SupplyDDGGSD-PAKSMOSFET Maximum Ratings TC = 25oC unless ot

 

Keywords - ALL TRANSISTORS DATASHEET

 fdd7n20tm.pdf Design, MOSFET, Power

 fdd7n20tm.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdd7n20tm.pdf Database, Innovation, IC, Electricity

 

 
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