View fdd7n25lztm datasheet:

December 2010 UniFETTMFDD7N25LZN-Channel MOSFET 250V, 6.2A, 0.55Features Description RDS(on) = 0.43 ( Typ.)@ VGS = 10V, ID = 3.1A These N-Channel enhancement mode power field effect transis tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ.12nC)DMOS technology. Low Crss ( Typ. 8pF)This advance technology has been especially tailored to minimize on-state resistance, provide superior switching Fast Switching performance, and withstand high energy pulse in the avalanche 100% Avalanche Testedand commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor Improved dv/dt Capabilitycorrection. RoHS CompliantDDDGGGSD-PAKSSMOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter Ratings Un

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