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September 2009UniFETTMFDP18N20F / FDPF18N20FTtmN-Channel MOSFET200V, 18A, 0.14Features Description RDS(on) = 0.12 ( Typ.)@ VGS = 10V, ID = 9A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 20nC)stripe, DMOS technology. Low Crss ( Typ. 24pF)This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor- Fast switching mance, and withstand high energy pulse in the avalanche and 100% avalanche testedcommutation mode. These devices are well suited for highefficient switching mode power supplies and active power factor Improve dv/dt capabilitycorrection. RoHS compliantDGTO-220FTO-220 G D SG D SFDPF SeriesFDP SeriesSMOSFET Maximum Ratings TC = 25oC unless

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