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August 2010FGPF4533330V, PDP IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE (sat) =1.55 V @ IC = 50 Ations where low conduction and switching losses are essential. High input impedance Fast switching RoHS compliant Applications PDP SystemTO-220F G C E(Retractable)Absolute Maximum RatingsSymbol Description Ratings UnitsVCES Collector to Emitter Voltage 330 VVGES Gate to Emitter Voltage 30 V@ TC = 25oC 200 AIC pulse(1)* Collector Current Maximum Power Dissipation @ TC = 25oC 28.4 WPDMaximum Power Dissipation @ TC = 100oC 11.4 WoTJ Operating Junction Temperature -55 to +150 CoTstg Storage Temperature Range -55 to +150 CMaximum Lead Temp. for solderi

 

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 fgpf4533.pdf Design, MOSFET, Power

 fgpf4533.pdf RoHS Compliant, Service, Triacs, Semiconductor

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