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August 2010FGPF4536360V, PDP IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of Low saturation voltage: VCE (sat) =1.59 V @ IC = 50 A trench IGBTs offer the optimum performance for PDPapplications where low conduction and switching losses are High input impedanceessential. Fast switching RoHS compliant Application PDP SystemTO-220F G C E(Retractable)Absolute Maximum RatingsSymbol Description Ratings UnitsVCES Collector to Emitter Voltage 360 VVGES Gate to Emitter Voltage 30 V@ TC = 25oC220 AIC pulse(1)* Pulsed Collector Current Maximum Power Dissipation @ TC = 25oC 28.4 WPDMaximum Power Dissipation @ TC = 100oC11.4 WoTJ Operating Junction Temperature -55 to +150 CoTstg Storage Temperature Range -55 to +150 CMaximum Lead Temp. for solderi

 

Keywords - ALL TRANSISTORS DATASHEET

 fgpf4536.pdf Design, MOSFET, Power

 fgpf4536.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fgpf4536.pdf Database, Innovation, IC, Electricity

 

 
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