View fqb12p10tm datasheet:

TMQFETFQB12P10 / FQI12P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -11.5A, -100V, RDS(on) = 0.29 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are well 175C maximum junction temperature ratingsuited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontrol.DDGG SD2-PAK I2-PAKG D SFQB Series FQI SeriesSAbsolut

Keywords - ALL TRANSISTORS DATASHEET

 fqb12p10tm.pdf Design, MOSFET, Power

 fqb12p10tm.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqb12p10tm.pdf Database, Innovation, IC, Electricity