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View fqb50n06 fqi50n06 datasheet:

fqb50n06_fqi50n06fqb50n06_fqi50n06

October 2008QFETFQB50N06 / FQI50N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are well 175C maximum junction temperature ratingsuited for low voltage applications such as automotive, DC/ RoHS Compliant DC converters, and high efficiency switching for powermanagement in portable and battery operated products.

 

Keywords - ALL TRANSISTORS DATASHEET

 fqb50n06 fqi50n06.pdf Design, MOSFET, Power

 fqb50n06 fqi50n06.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqb50n06 fqi50n06.pdf Database, Innovation, IC, Electricity

 

 
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