View fqd10n20ltf fqd10n20ltm fqu10n20ltu datasheet:

December 2000TMQFETQFETQFETQFETFQD10N20L / FQU10N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced technology is especially tailored to minimize Fast switchingon-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation modes. These devices are Low level gate drive requirement allowing directwell suited for high efficiency switching DC/DC converters,operation from logic driversswitch mode power supplies, and motor control.DD G D-PAK I-PAKG

Keywords - ALL TRANSISTORS DATASHEET

 fqd10n20ltf fqd10n20ltm fqu10n20ltu.pdf Design, MOSFET, Power

 fqd10n20ltf fqd10n20ltm fqu10n20ltu.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqd10n20ltf fqd10n20ltm fqu10n20ltu.pdf Database, Innovation, IC, Electricity