All Transistors. Datasheet

 

View fqd10n20tf fqd10n20tm fqu10n20tu datasheet:

fqd10n20tf_fqd10n20tm_fqu10n20tufqd10n20tf_fqd10n20tm_fqu10n20tu

April 2000TMQFETQFETQFETQFETFQD10N20 / FQU10N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters,switch mode power supply, DC-AC converters foruninterrupted power supply, motor control.DD G D-PAK I-PAKGSFQD Series G FQU SeriesD S SAb

 

Keywords - ALL TRANSISTORS DATASHEET

 fqd10n20tf fqd10n20tm fqu10n20tu.pdf Design, MOSFET, Power

 fqd10n20tf fqd10n20tm fqu10n20tu.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqd10n20tf fqd10n20tm fqu10n20tu.pdf Database, Innovation, IC, Electricity

 

 
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