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January 2009QFETFQD12N20L / FQU12N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are well Low level gate drive requirement allowing directsuited for high efficiency switching DC/DC converters,opration from logic driversswitch mode power supply, motor control. RoHS Compliant DDG D-PAK I-PAKGS

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 fqd12n20ltf fqd12n20ltm fqd12n20l fqu12n20l.pdf Design, MOSFET, Power

 fqd12n20ltf fqd12n20ltm fqd12n20l fqu12n20l.pdf RoHS Compliant, Service, Triacs, Semiconductor

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