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View fqd12n20ltm f085 datasheet:

fqd12n20ltm_f085fqd12n20ltm_f085

June 2010FQD12N20LTM_F085 200V Logic Level N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are well Low level gate drive requirement allowing directsuited for high efficiency switching DC/DC converters,opration from logic driversswitch mode power supply, motor control. Qualified to AEC Q101 RoHS Compliant DDG

 

Keywords - ALL TRANSISTORS DATASHEET

 fqd12n20ltm f085.pdf Design, MOSFET, Power

 fqd12n20ltm f085.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqd12n20ltm f085.pdf Database, Innovation, IC, Electricity

 

 
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