View fqd5n20ltf fqd5n20ltm fqd5n20l fqu5n20l datasheet:

October 2008QFETFQD5N20L / FQU5N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology is especially tailored to minimize Fast switchingon-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation modes. These devices are Low level gate drive requirement allowing directwell suited for high efficiency switching DC/DC converters,operation from logic driversswitch mode power supplies, and motor control. RoHS Compliant DD G D-PAK I-PAKG

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 fqd5n20ltf fqd5n20ltm fqd5n20l fqu5n20l.pdf Design, MOSFET, Power

 fqd5n20ltf fqd5n20ltm fqd5n20l fqu5n20l.pdf RoHS Compliant, Service, Triacs, Semiconductor

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