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View fqd5n50tf fqu5n50tu datasheet:

fqd5n50tf_fqu5n50tufqd5n50tf_fqu5n50tu

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.5A, 500V, RDS(on) = 1.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply, powerfactor correction, electronic lamp ballast based on halfbridge.DD G D-PAK I-PAKGSFQD Series G FQU SeriesD S SAbsoIute Maximum Ratings

 

Keywords - ALL TRANSISTORS DATASHEET

 fqd5n50tf fqu5n50tu.pdf Design, MOSFET, Power

 fqd5n50tf fqu5n50tu.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqd5n50tf fqu5n50tu.pdf Database, Innovation, IC, Electricity

 

 
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