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October 2008QFETFQD6N40C / FQU6N40C 400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are well RoHS Compliant suited for high efficiency switched mode power supplies,electronic lamp ballasts based on half bridge topology.DD

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 fqd6n40ctf fqd6n40ctm fqd6n40c fqu6n40c fqu6n40ctu.pdf Design, MOSFET, Power

 fqd6n40ctf fqd6n40ctm fqd6n40c fqu6n40c fqu6n40ctu.pdf RoHS Compliant, Service, Triacs, Semiconductor

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