All Transistors. Datasheet

 

View fqd6n50ctf fqd6n50ctm fqd6n50c fqu6n50c datasheet:

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October 2008QFETFQD6N50C / FQU6N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge (typical 19nC)planar stripe, DMOS technology. Low Crss (typical 15pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are well RoHS Compliant suited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballastsbased on half bridge topology.DD

 

Keywords - ALL TRANSISTORS DATASHEET

 fqd6n50ctf fqd6n50ctm fqd6n50c fqu6n50c.pdf Design, MOSFET, Power

 fqd6n50ctf fqd6n50ctm fqd6n50c fqu6n50c.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqd6n50ctf fqd6n50ctm fqd6n50c fqu6n50c.pdf Database, Innovation, IC, Electricity

 

 
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