View fqd7n10tm datasheet:

October 2008QFETFQD7N10 / FQU7N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology is especially tailored to minimize Fast switchingon-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation modes. These devices are RoHS Compliant well suited for low voltage applications such as audioamplifiers, high efficiency switching DC/DC converters, andDC motor control.DD G D-PAK I-PAKGSFQD Series G FQU SeriesD S SAbsolute Maximum Ratings TC

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