All Transistors. Datasheet

 

View fqd9n25tf fqd9n25tm fqd9n25 fqu9n25 fqu9n25tu datasheet:

fqd9n25tf_fqd9n25tm_fqd9n25_fqu9n25_fqu9n25tufqd9n25tf_fqd9n25tm_fqd9n25_fqu9n25_fqu9n25tu

May 2000TMQFETQFETQFETQFETFQD9N25 / FQU9N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 250V, RDS(on) = 0.42 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15.5 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters,switch mode power supply.DD G D-PAK I-PAKGSFQD Series G FQU SeriesD S SAbsoIute Maximum Ratings T = 25C unless otherwise notedSymboI

 

Keywords - ALL TRANSISTORS DATASHEET

 fqd9n25tf fqd9n25tm fqd9n25 fqu9n25 fqu9n25tu.pdf Design, MOSFET, Power

 fqd9n25tf fqd9n25tm fqd9n25 fqu9n25 fqu9n25tu.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqd9n25tf fqd9n25tm fqd9n25 fqu9n25 fqu9n25tu.pdf Database, Innovation, IC, Electricity

 

 
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