View fqp12n60c datasheet:
March 2014FQP12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 mDescription FeaturesThese N-Channel enhancement mode power field effect 12 A, 600 V, RDS(on) = 650 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, planar ID = 6 Astripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC)been especially tailored to minimize on-state resistance, Low Crss (Typ. 21 pF)provide superior switching performance, and withstand high 100% Avalanche Testedenergy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.DGD GSTO-220SoAbsolute Maximum Ratings TC = 25 C unless otherwise noted.Symbol Parameter FQP12N60C UnitVDSS Drai
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