View fqp12p10 datasheet:

November 2013FQP12P10P-Channel QFET MOSFET-100 V, -11.5 A, 290 m Description FeaturesThese P-Channel enhancement mode power field effect -11.5 A, -100 V, RDS(on) = 290 m (Max.) @ VGS = -10 V,transistors are produced using Fairchilds proprietary, ID = -5.75 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 21 nC)technology has been especially tailored to minimize on- Low Crss (Typ. 65 pF)state resistance, provide superior switching performance, 100% Avalanche Testedand withstand high energy pulse in the avalanche and 175oC Maximum Junction Temperature Ratingcommutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.SGGDSTO-220DoAbsolute Maximum Ratings TC = 25 C unless otherwise n

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