View fqp15p12 datasheet:

August 2014FQP15P12 / FQPF15P12P-Channel QFET MOSFET -120 V, -15 A, 0.2 Description FeaturesThis P-Channel enhancement mode power MOSFET is -15 A, -120 V, RDS(on) = 0.2 (Max.) @ VGS=-10 V, ID = -7.5 Aproduced using Fairchild Semiconductors proprietary Low Gate Charge (Typ. 29 nC)planar stripe and DMOS technology. This advanced Low Crss (Typ. 110 pF)MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior 100% Avalanche Testedswitching performance and high avalanche energy 175C Maximum Junction Temperature Ratingstrength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.SGGDS GDSTO-220 TO-220FDAbsolute Maximum Ratings TC = 25C unless otherwise noted.Symbol Parameter FQ

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