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fqp3n30fqp3n30

April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.2A, 300V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters,switch mode power supply.DG GD TO-220S SAbsoIute Maximum Ratings T = 25C unless otherwise notedSymboI Parameter FQP3N30 UnitsVDSSDrain-So

 

Keywords - ALL TRANSISTORS DATASHEET

 fqp3n30.pdf Design, MOSFET, Power

 fqp3n30.pdf RoHS Compliant, Service, Triacs, Semiconductor

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