View fqp3n50c fqpf3n50c datasheet:

QFETFQP3N50C/FQPF3N50C 500V N-Channel MOSFETFeatures Description 3 A, 500 V, RDS(on) = 2.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 10 nC )DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology has been especially tailored to mini- Fast switching mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and 100 % avalanche testedcommutation mode. These devices are well suited for high effi- Improved dv/dt capability ciency switched mode power supplies, active power factor cor-rection, electronic lamp ballasts based on half bridge topology.D

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