View fqp3n60 datasheet:

April 2000TMQFETQFETQFETQFETFQP3N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 600V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply.DG GD TO-220SFQP SeriesSAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter FQP3N60 UnitsVDSSDrain-Source Voltage 600 VIDDrain C

Keywords - ALL TRANSISTORS DATASHEET

 fqp3n60.pdf Design, MOSFET, Power

 fqp3n60.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqp3n60.pdf Database, Innovation, IC, Electricity