View fqp3n60c datasheet:

January 2006TMQFETFQP3N60C600V N-Channel MOSFETFeatures Description 3A, 600V, RDS(on) = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 10.5 nC)stripe, DMOS technology. Low Crss ( typical 5 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the avalancheand commutation mode. These devices are well suited for high Improved dv/dt capabilityefficiency switched mode power supplies, active power factorcorrection, electronic lamp ballasts based on half bridgetopology.D G TO-220G D SFQP Series SAbsolute Maximum RatingsSymb

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