View fqp3n80 datasheet:

September 2000TMQFETFQP3N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply.D3 53 5G TO-220G D SFQP SeriesSAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter FQP3N80 UnitsVDSSDrain-Source Voltage 800 VIDDrain Current -

Keywords - ALL TRANSISTORS DATASHEET

 fqp3n80.pdf Design, MOSFET, Power

 fqp3n80.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqp3n80.pdf Database, Innovation, IC, Electricity