View fqp8n60c datasheet:

April 2014FQP8N60CN-Channel QFET MOSFET600 V, 7.5 A, 1.2 DescriptionFeaturesThese N-Channel enhancement mode power field effect 7.5 A, 600 V, RDS(on) = 1.2 (Max.) @ VGS = 10 V,transistors are produced using Fairchild s proprietary, ID = 3.75 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC)technology has been especially tailored to minimize on- Low Crss (Typ. 12 pF)state resistance, provide superior switching performance, 100% Avalanche Testedand withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.DGGDSTO-220SoAbsolute Maximum Ratings TC = 25 C unless otherwise noted.Symbol Parameter FQP8N60C UnitVDSSD

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