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January 2009TMQFETFQP8N80C/FQPF8N80C/FQPF8N80CYDTU800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are well RoHS Compliant suited for high efficiency switch mode power supplies.D

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