View fqpf12p10 datasheet:

TMQFETFQPF12P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -8.2A, -100V, RDS(on) = 0.29 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are well 175C maximum junction temperature ratingsuited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontrol.DGTO-220FG DSFQPF SeriesSAbsolute Maximum Ratings TC = 25C unles

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