View fqpf2n80 datasheet:

September 2000TMQFETFQPF2N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.5A, 800V, RDS(on) = 6.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply.D3 53 5G G DS TO-220FSFQPF SeriesAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter FQPF2N80 UnitsVDSSDrain-Source Voltage 800 VIDDrain Curren

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