View fqpf47p06 datasheet:

May 2001TMQFETFQPF47P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -30A, -60V, RDS(on) = 0.026 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC)planar stripe, DMOS technology. Low Crss ( typical 320 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand a high energy pulse in the Improved dv/dt capabilityavalanche and commutation modes. These devices are 175C maximum junction temperature ratingwell suited for low voltage applications such as automotive,DC/DC converters, and high efficiency switching for powermanagement in portable and battery operated products.S

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