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fqu5n40_fqd5n40fqu5n40_fqd5n40

April 2000TMQFETQFETQFETQFETFQD5N40 / FQU5N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.4A, 400V, RDS(on) = 1.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply,electronic lamp ballast based on half bridge.DD G D-PAK I-PAKGSFQD Series G FQU SeriesD S SAbsoIute Maximum Ratings TC = 25C unless otherw

 

Keywords - ALL TRANSISTORS DATASHEET

 fqu5n40 fqd5n40.pdf Design, MOSFET, Power

 fqu5n40 fqd5n40.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqu5n40 fqd5n40.pdf Database, Innovation, IC, Electricity

 

 
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