View h2n7000 datasheet:

H2N7000 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor General Description These products have been designed to minimize on-state resistance While TO-92 provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. 1- S 2-G 3-D Features High density cell design for low Rds(on). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. Maximum RatingsTa=25 unless otherwise specified Tstg Storage Temperature ------------------------------------------------------ -55~150Tj Operating Junction Temperature ---------------------------------------------- -55~150

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