View h5n2507p datasheet:

Preliminary Datasheet H5N2507P R07DS0877EJ0200(Previous: RJJ03G0646-0100)250V - 50A - MOS FET Rev.2.00High Speed Power Switching Sep 12, 2012Features Low on-resistance RDS(on) = 0.04 typ. (at ID = 25 A, VGS= 10 V, Ta = 25C) Low leakage current High speed switching Low gate charge Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P )4D1. Gate2. DrainG3. Source4. Drain12S3Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to Source voltage VDSS 250 VGate to Source voltage VGSS 30 VDrain current ID 50 ADrain peak current ID (pulse) Note1 200 ABody-Drain diode reverse Drain current IDR 50 AAvalanche current IAP Note3 35 AChannel dissipation Pch Note2 150 WChannel to case thermal impedance ch-c 0.833 C/W Channel temperature

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