View hat1044m datasheet:

HAT1044MSilicon P Channel Power MOS FETPower SwitchingADE-208-753C(Z)Preliminary 4th. EditionDecember 1998Features Low on-resistance Low drive current High density mounting 4.5V gate drive device can be driven from 5V sourceOutlineTSOP64561 2 5 63D D D D213G4 Source3 Gate1, 2, 5, 6 DrainS4HAT1044MAbsolute Maximum Ratings (Ta = 25 C)Item Symbol Ratings UnitDrain to source voltage VDSS -30 VGate to source voltage VGSS 20 VDrain current ID*2 -4.5 ADrain peak current ID(pulse) *1 -18 ABody-drain diode reverse drain current IDR*2 -4.5 AChannel dissipation Pch(pulse)*2 2.0 WPch(continuous)*3 1.05 WChannel temperature Tch 150 CStorage temperature Tstg 55 to +150 CNotes: 1. PW 10 s, duty cycle 1 %2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW 5s,Ta=25

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