View hat1046r datasheet:

HAT1046RSilicon P Channel Power MOS FETHigh Speed Power SwitchingADE-208-1222 (Z)1st. EditionMar. 2001Features Low-voltage drive (2.5 V drive) Low on resistance Capable of 4 V gate drive Low on-resistanceRDS(on) = 30 m typ. (at VGS = 4 V)External ViewSOP-8567843217 8 5 6D DD D42GG1, 3 Source2, 4 GateS 3S15, 6, 7, 8 DrainMOS2MOS1HAT1046RAbsolute Maximum Ratings (Ta = 25 C)Item Symbol Value UnitDrain to source voltage VDSS 20 VGate to source voltage VGSS 12 VDrain current ID 6 ADrain peak current ID (pulse)*1 48 ABody-drain diode reverse drain IDR 6 AcurrentPermissible channel loss Pch*2 2.0 WPch*2 3.0 WChannel temperature Tch 150 CStorage temperature Tstg 55 to +150 CNotes: 1. PW 10 s, duty cycle 1%2. 1 Drive operation ; When using

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