View hfd630 hfu630 datasheet:

Dec 2012BVDSS = 200 VRDS(on) typ HFD630 / HFU630ID = 7.2 A200V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD630 HFU630 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) GS=10V 100% Avalanche TestedAbsolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 200 VID Drain Current Continuous (TC = 25 7.2 ADrain Current Continuous (TC = 100 4.6 AIDM Drain Current Pulsed (Note 1) 28.8 AVGS Gate-Source Voltage 30 VEAS Single Pulsed Avalanche Energy (Note 2) 160 mJIAR Avalanche Current (Note 1) 7.2 AEAR Repetitive

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