View ipb06cn10n-g ipi06cn10n-g ipp06cn10n-g datasheet:
IPB06CN10N G IPI06CN10N GIPP06CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 6.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectificationType IPB06CN10N G IPI06CN10N G IPP06CN10N GPackage PG-TO263-3 PG-TO262-3 PG-TO220-3Marking 06CN10N 06CN10N 06CN10NMaximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitIContinuous drain current T =25 C2) 100 ADCT =100 C88CI T =25 C400Pulsed drain current3) D,pulse CEAvalanche energy, single pulse I =100 A, R =25 480 mJAS D GS
Keywords - ALL TRANSISTORS DATASHEET
ipb06cn10n-g ipi06cn10n-g ipp06cn10n-g.pdf Design, MOSFET, Power
ipb06cn10n-g ipi06cn10n-g ipp06cn10n-g.pdf RoHS Compliant, Service, Triacs, Semiconductor
ipb06cn10n-g ipi06cn10n-g ipp06cn10n-g.pdf Database, Innovation, IC, Electricity



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet