View ipb06cn10n-g ipi06cn10n-g ipp06cn10n-g datasheet:

IPB06CN10N G IPI06CN10N GIPP06CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 6.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectificationType IPB06CN10N G IPI06CN10N G IPP06CN10N GPackage PG-TO263-3 PG-TO262-3 PG-TO220-3Marking 06CN10N 06CN10N 06CN10NMaximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitIContinuous drain current T =25 C2) 100 ADCT =100 C88CI T =25 C400Pulsed drain current3) D,pulse CEAvalanche energy, single pulse I =100 A, R =25 480 mJAS D GS

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 ipb06cn10n-g ipi06cn10n-g ipp06cn10n-g.pdf Design, MOSFET, Power

 ipb06cn10n-g ipi06cn10n-g ipp06cn10n-g.pdf RoHS Compliant, Service, Triacs, Semiconductor

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