View ipd60r180c7 datasheet:

IPD60R180C7MOSFETDPAK600V CoolMOS C7 Power DeviceCoolMOS C7 is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.21The 600V C7 is the first technology ever with R *A below 1Ohm*mm.DS(on)3Features Suitable for hard and soft switching (PFC and high performance LLC) Increased MOSFET dv/dt ruggedness to 120V/nsDrain Increased efficiency due to best in class FOM R *E and R *Q Pin 2, TabDS(on) oss DS(on) g Best in class R /packageDS(on)*1GatePin 1Benefits Increased economies of scale by use in PFC and PWM topologies in theSource*1: Internal body diodePin 3application Higher dv/dt limit enables

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