View ipd60r280p7 datasheet:

isc N-Channel MOSFET Transistor IPD60R280P7IIPD60R280P7FEATURESStatic drain-source on-resistance:RDS(on)0.28Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for a wide variety of applications and power rangesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 12 ADI Drain Current-Single Pulsed 36 ADMP Total Dissipation @T =25 53 WD CT Max. Operating Junction Temperature 150 jT Storage Temperature -40~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 2.36Channel-to-ambient thermal resistance/WRth(j-a) 621isc websitewww.iscsemi.cn isc & is

Keywords - ALL TRANSISTORS DATASHEET

 ipd60r280p7.pdf Design, MOSFET, Power

 ipd60r280p7.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ipd60r280p7.pdf Database, Innovation, IC, Electricity